Germanium-based technologies from materials to devices download

Materials science processing on deepdyve, the largest online rental service for scholarly research with thousands of academic publications available at your fingertips. Ultradoped n type germanium thin films for sensing in. First results on formation of thin film geoi structures by the smart cut technology are presented in this paper. Germaniumbased metalinsulatorsemiconductor transistors. In contrast to silicon, little is known about the possible gettering approaches that can be applied to ge. Multiple gate dielectric materials allow use of a highk value gate dielectric.

In these fields, he has co authored over 1500 journal and conference papers, 12 book chapters and a monograph on radiation effects in advanced semiconductor devices and materials springer, 2002. The nook book ebook of the germaniumbased technologies. Metal impurities in silicon and germaniumbased technologies. Ge channel devices continue to lag behind, but are also making progress due to improved ohmic contacts 24,145. It offers a survey of controlling defects in semiconductor devices. Germaniumbased technologies by cor claeys overdrive. The contributing authors are international experts with a worldwide recognition and. Osa single crystal tellurium semiconductor core optical. In summary, germanium based channel devices are beginning to show signs of readiness for production, especially in light of recent breakthroughs 200. A group iiiv barrier layer adds strain to the channel. A brief summary is given of some material and device issues which have not been addressed in previous chapters. Bradley department of electrical and computer engineering, virginia tech, blacksburg, va 24061, usa. Buy metal impurities in silicon and germaniumbased technologies by cor claeys, eddy simoen from waterstones today. Basic investigations on strained layer growth, interface properties and deviation from equilibrium are done with sigesi heterostructures.

Get your kindle here, or download a free kindle reading app. Nadoped optical germanium bulk crystals, applied physics. In the twentyfirst century, the return of advanced ge devices preparing postsi device era. The first part covers fundamentals, describing the crystallographic.

Materials free fulltext germanium based fieldeffect. Different vacancy and interstitial related defects are studied in function of the crystal growth parameters. Developments made in this area in different laboratories both in russia and abroad are discussed. Current topics of silicon germanium devices current topics of silicon germanium devices kasper, erich 20080730 00. From materials to devicesis the first book to provide a broad, indepth coverage of the field, including recent advances in. Germaniumbased technologies active area 70 nm tin 0. Physical sciences, engineering and technologychemistry. Materials, technologies and applications for optical interconnects y. Dissolution chemistry and biocompatibility of silicon and. Germanium is a semiconductor material that formed the basis for the development. Germaniumbased nanomaterials have emerged as important candidates for nextgeneration energystorage devices owing to their unique chemical and physical properties. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron sub 45 nm technologies. Materials today vol 10, issue 11, pages 156 november.

A quantum well transistor has a germanium quantum well channel region. Proceedings of symposium t emrs 2006 spring meeting on germanium based semiconductors from materials to devices. From materials to devices is the first book to provide a broad, indepth coverage of the field, including recent advances in. Current topics of silicon germanium devices, applied. Silicon germanium materials and devices a market and technology overview to 2006. The type of harmful defects is depending on the application that is envisaged. Analysis of crack formation in germanium substrate at. Cmos and the effects of metals on sigebased devices and materials. The ge surfaces, examined by xray photoelectron spectroscopy, were suspended. Nanoscale measurements of phosphorousinduced lattice. The results reported here include comprehensive studies of the dissolution by hydrolysis of. From materials to devicesis the first book to provide a broad, indepth coverage of the field, including recent. The aim is to give an overview of the physics of extended defects in germanium, i. From theory to applied technologies optical science and engineering series.

The sourcedrain engineering of nanoscale germaniumbased. Read the sourcedrain engineering of nanoscale germaniumbased mos devices by zhiqiang li available from rakuten kobo. From materials to devices is the first book to provide a. Materials science in semiconductor processing special. From materials to devices kindle edition by claeys, cor, simoen, eddy. What is more, a bridgmantype fiber postprocessing technique was constructed and used for the first time to anneal the polycrystalline te semiconductor core optical fibers. Semiconductor devices and materials 2002, springer, the chinese translation of which was published in 2008. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultralowpower and highspeed microelectronic devices. The dualge path for postsi cmos is becoming an increasingly viable option. From materials to devices find, read and cite all the research. Research progress of sibased germanium materials and. Another book, the fundamental and technological aspects of extended defects in. Request pdf on jan 1, 2007, r jones and others published germaniumbased technologies.

Enrico sangiorgi, in germaniumbased technologies, 2007. This book mainly focuses on reducing the high parasitic resistance in the sourcedrain of germanium nmosfet. Germanium ge is the material used in the first transistor invented by bardeen, brattain, and shockley at bell. Advanced material and device applications with germanium. Tellurium te semiconductor core optical fibers with silicate glass cladding were drawn by the molten core method. For the temperature window which is relevant for crystal growth and device processing, the firstorder elastic. Ultradoped ntype germanium thin films for sensing in the mid. A siliconcontaining etch stop layer provides easy placement of a gate dielectric close to the channel. Use features like bookmarks, note taking and highlighting while reading germaniumbased technologies. It is shown that germanium is best suited for this purpose based on its properties. A method for producing thin, below 6 nm of equivalent oxide thickness, germanium oxynitride layer on gebased materials for use as gate dielectric is disclosed.

From materials to devices by cor claeys and eddy simoen hardcover may 7, 2007 nitride semiconductor devices principles and simulation edited by joachim piprek march 27, 2007 isbn 9783527406678. Germaniumoninsulator geoi structure realized by the. Hydrobromic acid hbr vapor was used to remove native oxide from an undoped 100 germanium ge wafer with ntype conductivity and to passivate its surface against reoxidation. In the case of substitutional doping, the formulation of predictive models of dopinginduced strain is a complex matter because the theory should compute the dependence of the lattice parameter on two distinct contributions.

From materials to devices is the first book to provide a broad, indepth coverage of the field, including recent advances in getechnology and the fundamentals in material science, device physics and semiconductor processing. He was also a coeditor of the book on germaniumbased technologies from materials to devices elsevier march 2007. He was also a coeditor of the book germaniumbased technologiesfrom materials to devices 2007, elsevier. He coedited books on low temperature electronics and germaniumbased technologies. New channel materials with high carrier mobility are being investigated as alternatives and have. All important metals are discussed including their origin during crystal andor device manufacturing, their fundamental properties, their characterization techniques and their impact on the electrical device performance.

Surface defects and passivation of ge and iiiv interfaces. Read nadoped optical germanium bulk crystals, applied physics a. This is illustrated in figure 1, where products requiring a particular function based a material technology requiring a set of raw materials a can continue to be produced thanks to the. Semiconducting materials are central to the development of highperformance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The possibility of improving the performance of semiconductor integrated circuits by replacing the silicon layer in metalinsulatorsemiconductor mis transistors by a material with higher chargecarrier mobility. Compared to soi manufacturing, the development of geoi requires adaptation to the available germanium material. From materials to devices and wrote monographs on radiation effects in advanced semiconductor materials and devices, fundamental and technological aspects of extended defects in germanium and random telegraph signals in semiconductor. First, nitrogen is incorporated in a surface layer of the gebased material. Fabrice letertre, in germaniumbased technologies, 2007. Vapor phase passivation of 100 germanium surfaces with. Download it once and read it on your kindle device, pc, phones or tablets. Germanium is an elemental semiconductor, which played an important role in the. From materials to devices is the first book to provide a broad, indepth coverage of the field, including recent advances in ge technology and the fundamentals in material science, device physics and semiconductor processing.